Part Number :
BCM857DS115
Manufacturer :
Rochester Electronics
Description :
BCM857DS115 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Rochester Electronics stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
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More Information :
BCM857DS115 More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.06
Remark :
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Mount :
Surface Mount
Height :
1.1 mm
Weight :
4.535924 g
Polarity :
PNP
Packaging :
Tape and Reel
Resistance :
50 Ω
Case/Package :
CSMD
Zener Voltage :
3.3 V
Contact Plating :
Tin
Power Dissipation :
380 mW
Frequency Tolerance :
0.002 %
Element Configuration :
Dual
Max Collector Current :
-100 mA
Gain Bandwidth Product :
175 MHz
Min Operating Temperature :
-65 °C
Collector Base Voltage (VCBO) :
-50 V
Ambient Temperature Range High :
150 °C
ESR (Equivalent Series Resistance) :
50 Ω
Collector Emitter Saturation Voltage :
-200 mV
Products Category :
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty :
9659 In Stock
Applications :
Data storage
Grid infrastructure
Width :
3.2 mm
Length :
5 mm
hFE Min :
200
Frequency :
16 MHz
Tolerance :
0.002 %
Schedule B :
8541210080
Test Current :
5 mA
Number of Pins :
6
Load Capacitance :
18 pF
Number of Elements :
2
Transition Frequency :
175 MHz
Max Breakdown Voltage :
45 V
Max Power Dissipation :
380 mW
Max Operating Temperature :
150 °C
Emitter Base Voltage (VEBO) :
-5 V
Max Junction Temperature (Tj) :
150 °C
Collector Emitter Voltage (VCEO) :
-45 V
Collector Emitter Breakdown Voltage :
-45 V
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