Part Number :
IMZ1AT108
Manufacturer :
ROHM Semiconductor
Description :
IMZ1AT108 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ROHM Semiconductor stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
T/T Paypal Visa MoneyGram Western Union
More Information :
IMZ1AT108 More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.46
Remark :
Manufacturer: ROHM Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount :
Surface Mount
Height :
1 mm
hFE Min :
120
Packaging :
Cut Tape
Case/Package :
SMD/SMT
Current Rating :
150 mA
Power Dissipation :
300 mW
Number of Terminals :
6
Element Configuration :
Dual
Max Collector Current :
150 mA
Gain Bandwidth Product :
180 MHz
Max Operating Temperature :
150 °C
Emitter Base Voltage (VEBO) :
-6 V
Collector Base Voltage (VCBO) :
60 V
Collector Emitter Breakdown Voltage :
50 V
Products Category :
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty :
7858 In Stock
Applications :
Grid infrastructure
Hybrid, electric & powertrain systems
Width :
1.6 mm
Length :
2.9 mm
Polarity :
NPN, PNP
Schedule B :
8541210080
Max Frequency :
100 MHz
Number of Pins :
6
Max Output Current :
150 mA
Transition Frequency :
140 MHz
Max Breakdown Voltage :
50 V
Max Power Dissipation :
300 mW
Operating Supply Voltage :
50 V
Min Operating Temperature :
-55 °C
Continuous Collector Current :
-150 mA
Collector Emitter Voltage (VCEO) :
50 V
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