Part Number :
BC847PNH6327XTSA1
Manufacturer :
IR (Infineon Technologies)
Description :
BC847PNH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
T/T Paypal Visa MoneyGram Western Union
More Information :
BC847PNH6327XTSA1 More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.05
Remark :
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount :
Surface Mount
Height :
800 µm
hFE Min :
200
Frequency :
250 MHz
Schedule B :
8541210080
Max Frequency :
250 MHz
Package Quantity :
3000
Number of Elements :
2
Max Breakdown Voltage :
45 V
Max Power Dissipation :
250 mW
Min Operating Temperature :
-65 °C
Continuous Collector Current :
100 mA
Collector Emitter Voltage (VCEO) :
650 mV
Collector Emitter Saturation Voltage :
650 mV
Products Category :
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty :
6922 In Stock
Applications :
TV
Broadband fixed line access
Mobile phones
Width :
1.25 mm
Length :
2 mm
Polarity :
NPN, PNP
Packaging :
Cut Tape (CT)
Case/Package :
SOT
Number of Pins :
6
Power Dissipation :
250 mW
Transition Frequency :
250 MHz
Max Collector Current :
100 mA
Max Operating Temperature :
150 °C
Emitter Base Voltage (VEBO) :
6 V
Collector Base Voltage (VCBO) :
50 V
Collector Emitter Breakdown Voltage :
45 V
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