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Part Number : HN1C03F-B(TE85L,F)
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : HN1C03F-B(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : HN1C03F-B(TE85L,F) More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.43
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Polarity : NPN
Packaging : Digi-Reel®
Number of Pins : 6
Number of Elements : 2
Element Configuration : Dual
Max Collector Current : 300 mA
Gain Bandwidth Product : 30 MHz
Min Operating Temperature : -55 °C
Collector Base Voltage (VCBO) : 50 V
Collector Emitter Breakdown Voltage : 20 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty : 9204 In Stock
Applications : Appliances Enterprise projectors
hFE Min : 200
Frequency : 30 MHz
Case/Package : SOT-26-6
Power Dissipation : 300 mW
Transition Frequency : 30 MHz
Max Breakdown Voltage : 20 V
Max Power Dissipation : 300 mW
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 25 V
Collector Emitter Voltage (VCEO) : 20 V
Collector Emitter Saturation Voltage : 42 mV
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HN1C03F-B(TE85L,F) Images |