Part Number :
BC856BDW1T1G
Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Description :
BC856BDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
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More Information :
BC856BDW1T1G More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.24
Remark :
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Width :
1.25 mm
Length :
2 mm
Polarity :
PNP
Packaging :
Digi-Reel®
Case/Package :
SOT-363-6
Current Rating :
-100 mA
Contact Plating :
Tin
Number of Elements :
2
Transition Frequency :
100 MHz
Max Breakdown Voltage :
65 V
Max Power Dissipation :
380 mW
Max Operating Temperature :
150 °C
Emitter Base Voltage (VEBO) :
5 V
Collector Emitter Voltage (VCEO) :
65 V
Collector Emitter Saturation Voltage :
-650 mV
Products Category :
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty :
1992 In Stock
Applications :
Datacom module
Test & measurement
Data storage
Height :
900 µm
hFE Min :
220
Frequency :
100 MHz
Schedule B :
8541210080
Max Frequency :
100 MHz
Number of Pins :
6
Power Dissipation :
380 mW
Voltage Rating (DC) :
-65 V
Element Configuration :
Dual
Max Collector Current :
100 mA
Gain Bandwidth Product :
100 MHz
Min Operating Temperature :
-55 °C
Collector Base Voltage (VCBO) :
80 V
Collector Emitter Breakdown Voltage :
65 V
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