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Part Number : HN1A01FE-GR,LF
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : HN1A01FE-GR,LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : HN1A01FE-GR,LF More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.06
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Polarity : PNP
Number of Pins : 6
Max Breakdown Voltage : 50 V
Max Power Dissipation : 100 mW
Emitter Base Voltage (VEBO) : -5 V
Collector Base Voltage (VCBO) : -50 V
Collector Emitter Breakdown Voltage : 50 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty : 2065 In Stock
Applications : Test & measurement Data storage Wired networking
hFE Min : 120
Packaging : Tape & Reel (TR)
Transition Frequency : 80 MHz
Max Collector Current : 150 mA
Gain Bandwidth Product : 80 MHz
Continuous Collector Current : -150 mA
Collector Emitter Voltage (VCEO) : 300 mV
Collector Emitter Saturation Voltage : -300 mV
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