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Part Number : HN2C01FU-GR(T5L,F)
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : HN2C01FU-GR(T5L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : HN2C01FU-GR(T5L,F) More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.48
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Polarity : NPN
Case/Package : SOT-363
Transition Frequency : 80 MHz
Max Breakdown Voltage : 50 V
Max Power Dissipation : 200 mW
Max Operating Temperature : 125 °C
Emitter Base Voltage (VEBO) : 5 V
Collector Emitter Voltage (VCEO) : 250 mV
Collector Emitter Saturation Voltage : 100 mV
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty : 9519 In Stock
Applications : Infotainment & cluster Gaming
hFE Min : 120
Packaging : Cut Tape (CT)
Number of Pins : 6
Element Configuration : Dual
Max Collector Current : 150 mA
Gain Bandwidth Product : 80 MHz
Min Operating Temperature : -55 °C
Collector Base Voltage (VCBO) : 60 V
Collector Emitter Breakdown Voltage : 50 V
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