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Part Number : HN4B01JE(TE85L,F)
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : HN4B01JE(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : HN4B01JE(TE85L,F) More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.39
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Packaging : Cut Tape (CT)
Transition Frequency : 80 MHz
Max Breakdown Voltage : 50 V
Max Power Dissipation : 100 mW
Max Operating Temperature : 150 °C
Collector Base Voltage (VCBO) : 60 V
Collector Emitter Breakdown Voltage : 50 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty : 2882 In Stock
Applications : Data storage Datacom module Test & measurement
Polarity : NPN, PNP
Case/Package : SOT-553
Element Configuration : Dual
Max Collector Current : 150 mA
Gain Bandwidth Product : 80 MHz
Emitter Base Voltage (VEBO) : 5 V
Collector Emitter Voltage (VCEO) : 250 mV
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