Part Number :
HN1A01F-Y(TE85L,F)
Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Description :
HN1A01F-Y(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
T/T Paypal Visa MoneyGram Western Union
More Information :
HN1A01F-Y(TE85L,F) More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.45
Remark :
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount :
Surface Mount
Polarity :
PNP
Packaging :
Digi-Reel®
Number of Pins :
6
Number of Elements :
2
Element Configuration :
Dual
Max Collector Current :
150 mA
Gain Bandwidth Product :
80 MHz
Min Operating Temperature :
-55 °C
Collector Base Voltage (VCBO) :
50 V
Collector Emitter Breakdown Voltage :
50 V
Products Category :
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty :
6844 In Stock
Applications :
Portable electronics
Advanced driver assistance systems (ADAS)
Body electronics & lighting
hFE Min :
120
Frequency :
80 MHz
Case/Package :
SOT-26-6
Power Dissipation :
300 mW
Transition Frequency :
80 MHz
Max Breakdown Voltage :
50 V
Max Power Dissipation :
300 mW
Max Operating Temperature :
125 °C
Emitter Base Voltage (VEBO) :
5 V
Collector Emitter Voltage (VCEO) :
50 V
Collector Emitter Saturation Voltage :
100 mV
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