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Part Number : HN1A01FU-Y,LF
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : HN1A01FU-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : HN1A01FU-Y,LF More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.28
Remark : Manufacturer: Toshiba Electronic Devices and Storage Corporation. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Height : 900 µm
hFE Min : 120
Packaging : Cut Tape (CT)
Transition Frequency : 80 MHz
Max Collector Current : 150 mA
Gain Bandwidth Product : 80 MHz
Min Operating Temperature : -55 °C
Continuous Collector Current : -150 mA
Collector Emitter Voltage (VCEO) : 300 mV
Collector Emitter Saturation Voltage : -100 mV
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty : 854 In Stock
Applications : Appliances Infotainment & cluster Hybrid, electric & powertrain systems
Width : 1.25 mm
Length : 2 mm
Polarity : PNP
Number of Pins : 6
Max Breakdown Voltage : 50 V
Max Power Dissipation : 200 mW
Max Operating Temperature : 125 °C
Emitter Base Voltage (VEBO) : -5 V
Collector Base Voltage (VCBO) : -50 V
Collector Emitter Breakdown Voltage : 50 V
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