Part Number :
NST857BDP6T5G
Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Description :
NST857BDP6T5G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
T/T Paypal Visa MoneyGram Western Union
More Information :
NST857BDP6T5G More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.41
Remark :
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Width :
850 µm
Length :
1.05 mm
Frequency :
100 MHz
Schedule B :
8541210080
Max Frequency :
100 MHz
Power Dissipation :
420 mW
Transition Frequency :
100 MHz
Max Collector Current :
100 mA
Gain Bandwidth Product :
100 MHz
Min Operating Temperature :
-55 °C
Collector Base Voltage (VCBO) :
50 V
Collector Emitter Breakdown Voltage :
45 V
Products Category :
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty :
2471 In Stock
Applications :
Mobile phones
Body electronics & lighting
Advanced driver assistance systems (ADAS)
Height :
400 µm
Polarity :
PNP
Packaging :
Tape and Reel
Case/Package :
SOT-963-6
Number of Pins :
6
Number of Elements :
2
Element Configuration :
Dual
Max Power Dissipation :
420 mW
Max Operating Temperature :
150 °C
Emitter Base Voltage (VEBO) :
6 V
Collector Emitter Voltage (VCEO) :
45 V
Collector Emitter Saturation Voltage :
-300 mV
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