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Part Number : BFU725F/N1,115
Manufacturer : NXP Semiconductors
Description : BFU725F/N1,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP Semiconductors stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFU725F/N1,115 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.41
Remark : Manufacturer: NXP Semiconductors. Rozee is one of the Distributors. Wide range of applications.
Gain : 24 dB
hFE Min : 40
Frequency : 55 GHz
Schedule B : 8541210080
Output Power : 136 mW
Power Dissipation : 136 mW
Transition Frequency : 55 GHz
Max Breakdown Voltage : 2.8 V
Max Power Dissipation : 136 mW
Min Operating Temperature : -65 °C
Continuous Collector Current : 40 mA
Collector Emitter Voltage (VCEO) : 2.8 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 9204 In Stock
Applications : Advanced driver assistance systems (ADAS) Factory automation & control Medical
Mount : Surface Mount
Polarity : NPN
Packaging : Tape and Reel
Case/Package : SO
Number of Pins : 4
Number of Elements : 1
Element Configuration : Single
Max Collector Current : 40 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 550 mV
Collector Base Voltage (VCBO) : 10 V
Collector Emitter Breakdown Voltage : 2.8 V
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