Part Number :
MMBTH10LT1G
Manufacturer :
Sanyo Semiconductor/ON Semiconductor
Description :
MMBTH10LT1G datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
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More Information :
MMBTH10LT1G More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.22
Remark :
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Width :
1.4 mm
Length :
3.04 mm
hFE Min :
60
Frequency :
650 MHz
Termination :
SMD/SMT
Max Frequency :
650 MHz
Number of Pins :
3
Power Dissipation :
225 mW
Voltage Rating (DC) :
25 V
Element Configuration :
Single
Max Collector Current :
100 nA
Gain Bandwidth Product :
650 MHz
Min Operating Temperature :
-55 °C
Collector Base Voltage (VCBO) :
30 V
Collector Emitter Voltage (VCEO) :
25 V
Collector Emitter Saturation Voltage :
500 mV
Products Category :
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty :
855 In Stock
Applications :
Advanced driver assistance systems (ADAS)
Gaming
Height :
1.01 mm
Weight :
4.535924 g
Polarity :
NPN
Packaging :
Tape & Reel (TR)
Case/Package :
SOT-23-3
Current Rating :
4 mA
Contact Plating :
Tin
Number of Elements :
1
Transition Frequency :
650 MHz
Max Breakdown Voltage :
25 V
Max Power Dissipation :
225 mW
Max Operating Temperature :
150 °C
Emitter Base Voltage (VEBO) :
3 V
Max Junction Temperature (Tj) :
150 °C
Collector Emitter Breakdown Voltage :
25 V
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