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Part Number : BF776H6327XTSA1
Manufacturer : IR (Infineon Technologies)
Description : BF776H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BF776H6327XTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.50
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain : 24 dB
Height : 1 mm
Frequency : 40 GHz
Case/Package : SOT-343
Power Dissipation : 200 mW
Transition Frequency : 46 GHz
Max Collector Current : 50 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 1.2 V
Max Junction Temperature (Tj) : 150 °C
Collector Emitter Voltage (VCEO) : 4 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 3080 In Stock
Applications : Wired networking Enterprise machine Body electronics & lighting
Mount : Surface Mount
Polarity : NPN
Packaging : Cut Tape (CT)
Contact Plating : Tin
Number of Elements : 1
Max Breakdown Voltage : 4.7 V
Max Power Dissipation : 200 mW
Min Operating Temperature : -65 °C
Collector Base Voltage (VCBO) : 13 V
Ambient Temperature Range High : 150 °C
Collector Emitter Breakdown Voltage : 4.7 V
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