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Part Number : BFP196WH6327XTSA1
Manufacturer : IR (Infineon Technologies)
Description : BFP196WH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFP196WH6327XTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.50
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain : 19 dB
Width : 1.25 mm
Length : 2 mm
Frequency : 7.5 GHz
Power Gain : 19 dB
Noise Figure : 1.3 dB
Number of Pins : 4
Package Quantity : 3000
Number of Elements : 1
Element Configuration : Single
Max Collector Current : 150 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 2 V
Collector Emitter Voltage (VCEO) : 12 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 8912 In Stock
Applications : Lighting Portable electronics
Mount : Surface Mount
Height : 900 µm
Polarity : NPN
Packaging : Cut Tape (CT)
Case/Package : SOT
Max Frequency : 7.5 GHz
Contact Plating : Tin
Power Dissipation : 700 mW
Transition Frequency : 7.5 GHz
Max Breakdown Voltage : 12 V
Max Power Dissipation : 700 mW
Min Operating Temperature : -55 °C
Collector Base Voltage (VCBO) : 20 V
Collector Emitter Breakdown Voltage : 12 V
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