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Part Number : BFP650H6327XTSA1
Manufacturer : IR (Infineon Technologies)
Description : BFP650H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFP650H6327XTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.52
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain : 21.5 dB
Width : 1.25 mm
Length : 2 mm
Frequency : 41 GHz
Power Gain : 21.5 dB
Noise Figure : 0.8 dB
Number of Pins : 4
Package Quantity : 3000
Number of Elements : 1
Element Configuration : Single
Max Collector Current : 150 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 1.2 V
Collector Emitter Voltage (VCEO) : 4 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 4852 In Stock
Applications : Lighting Wearables (non-medical) Industrial transport (non-car & non-light truck)
Mount : Surface Mount
Height : 900 µm
Polarity : NPN
Packaging : Tape & Reel
Case/Package : SOT
Max Frequency : 37 GHz
Contact Plating : Tin
Power Dissipation : 500 mW
Transition Frequency : 37 GHz
Max Breakdown Voltage : 4.5 V
Max Power Dissipation : 500 mW
Min Operating Temperature : -65 °C
Collector Base Voltage (VCBO) : 13 V
Collector Emitter Breakdown Voltage : 4.5 V
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