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Part Number : BF771E6327HTSA1
Manufacturer : IR (Infineon Technologies)
Description : BF771E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BF771E6327HTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.53
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain : 15 dB
Polarity : NPN
Case/Package : TO-236-3
Number of Pins : 3
Power Dissipation : 580 mW
Voltage Rating (DC) : 12 V
Max Collector Current : 80 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 2 V
Collector Emitter Voltage (VCEO) : 12 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 6843 In Stock
Applications : Wearables (non-medical) Broadband fixed line access Test & measurement
Mount : Surface Mount
Frequency : 8 GHz
Current Rating : 80 mA
Contact Plating : Tin
Number of Elements : 1
Transition Frequency : 8 GHz
Max Power Dissipation : 580 mW
Min Operating Temperature : -65 °C
Collector Base Voltage (VCBO) : 20 V
Collector Emitter Breakdown Voltage : 12 V
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