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Part Number : BFU730F,115
Manufacturer : NXP Semiconductors
Description : BFU730F,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP Semiconductors stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFU730F,115 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.41
Remark : Manufacturer: NXP Semiconductors. Rozee is one of the Distributors. Wide range of applications.
Gain : 12.5 dB
Width : 1.35 mm
Length : 2.2 mm
Polarity : NPN
Packaging : Digi-Reel®
Output Power : 197 mW
Contact Plating : Tin
Number of Elements : 1
Max Breakdown Voltage : 2.8 V
Max Power Dissipation : 197 mW
Min Operating Temperature : -65 °C
Continuous Collector Current : 5 mA
Collector Emitter Voltage (VCEO) : 2.8 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 8491 In Stock
Applications : Industrial transport (non-car & non-light truck) PC & notebooks Advanced driver assistance systems (ADAS)
Mount : Surface Mount
Height : 750 µm
hFE Min : 205
Frequency : 55 GHz
Schedule B : 8541210080
Number of Pins : 4
Power Dissipation : 197 mW
Transition Frequency : 55 GHz
Max Collector Current : 30 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 1 V
Collector Base Voltage (VCBO) : 10 V
Collector Emitter Breakdown Voltage : 2.8 V
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