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Part Number : BFP196WNH6327XTSA1
Manufacturer : IR (Infineon Technologies)
Description : BFP196WNH6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFP196WNH6327XTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.44
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Height : 1 mm
Polarity : NPN
Power Gain : 17 dB
Package Quantity : 3000
Number of Elements : 1
Max Operating Temperature : 150 °C
Collector Base Voltage (VCBO) : 20 V
Collector Emitter Voltage (VCEO) : 12 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 3037 In Stock
Applications : Wireless infrastructure Mobile phones Industrial transport (non-car & non-light truck)
hFE Min : 70
Packaging : Tape & Reel
Noise Figure : 1.1 dB
Power Dissipation : 700 mW
Max Collector Current : 150 mA
Emitter Base Voltage (VEBO) : 2 V
Max Junction Temperature (Tj) : 150 °C
Collector Emitter Breakdown Voltage : 12 V
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