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Part Number : NE85633-T1B-A
Manufacturer : Dialog Semiconductor
Description : NE85633-T1B-A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Dialog Semiconductor stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : NE85633-T1B-A More Information
ECAD : Request Free CAD Models
Pricing(USD) : $1.80
Remark : Manufacturer: Dialog Semiconductor. Rozee is one of the Distributors. Wide range of applications.
Gain : 11.5 dB
Width : 1.5 mm
Length : 2.9 mm
Polarity : NPN
Packaging : Cut Tape
Current Rating : 100 mA
Transition Frequency : 7 GHz
Max Breakdown Voltage : 12 V
Max Power Dissipation : 200 mW
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 3 V
Collector Emitter Voltage (VCEO) : 12 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 3863 In Stock
Applications : Wired networking Power delivery Gaming
Mount : Surface Mount
Height : 1.1 mm
Weight : 1.437803 g
Frequency : 1 GHz
Case/Package : SOT-23
Voltage Rating (DC) : 12 V
Element Configuration : Single
Max Collector Current : 100 mA
Gain Bandwidth Product : 7 GHz
Min Operating Temperature : -65 °C
Continuous Collector Current : 100 mA
Collector Emitter Breakdown Voltage : 12 V
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