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Part Number : 2SC5551AF-TD-E
Manufacturer : Sanyo Semiconductor/ON Semiconductor
Description : 2SC5551AF-TD-E datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : 2SC5551AF-TD-E More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.00
Remark : Manufacturer: Sanyo Semiconductor/ON Semiconductor. Rozee is one of the Distributors. Wide range of applications.
Width : 2.5 mm
Length : 4.5 mm
Packaging : Tape & Reel (TR)
Number of Pins : 3
Transition Frequency : 3.5 GHz
Max Breakdown Voltage : 30 V
Max Power Dissipation : 1.3 W
Min Operating Temperature : -55 °C
Continuous Collector Current : 300 mA
Collector Emitter Voltage (VCEO) : 30 V
Collector Emitter Saturation Voltage : 300 mV
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 768 In Stock
Applications : Building automation Grid infrastructure Wearables (non-medical)
Height : 1.5 mm
Polarity : NPN
Max Frequency : 3.5 GHz
Power Dissipation : 1.3 W
Element Configuration : Single
Max Collector Current : 300 mA
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 2 V
Collector Base Voltage (VCBO) : 40 V
Collector Emitter Breakdown Voltage : 30 V
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