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Part Number : NE662M04-T2-A
Manufacturer : Dialog Semiconductor
Description : NE662M04-T2-A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Dialog Semiconductor stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : NE662M04-T2-A More Information
ECAD : Request Free CAD Models
Pricing(USD) : $2.00
Remark : Manufacturer: Dialog Semiconductor. Rozee is one of the Distributors. Wide range of applications.
Gain : 18 dB
Width : 1.25 mm
Length : 2 mm
Frequency : 2 GHz
Output Power : 115 mW
Number of Pins : 4
Number of Elements : 1
Max Breakdown Voltage : 3.3 V
Max Power Dissipation : 115 mW
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 1.5 V
Collector Base Voltage (VCBO) : 15 V
Collector Emitter Breakdown Voltage : 3.3 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 3445 In Stock
Applications : Hybrid, electric & powertrain systems Building automation Connected peripherals & printers
Mount : Surface Mount
Height : 590 µm
Polarity : NPN
Case/Package : SOT-343
Max Frequency : 25 GHz
Power Dissipation : 115 mW
Transition Frequency : 25 GHz
Max Collector Current : 35 mA
Gain Bandwidth Product : 25 GHz
Min Operating Temperature : -65 °C
Continuous Collector Current : 35 mA
Collector Emitter Voltage (VCEO) : 3.3 V
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