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Part Number : NE58219-T1-A
Manufacturer : Dialog Semiconductor
Description : NE58219-T1-A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Dialog Semiconductor stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : NE58219-T1-A More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.80
Remark : Manufacturer: Dialog Semiconductor. Rozee is one of the Distributors. Wide range of applications.
Mount : Surface Mount
Polarity : NPN
Packaging : Cut Tape (CT)
Max Frequency : 5 GHz
Power Dissipation : 100 mW
Transition Frequency : 5 GHz
Max Breakdown Voltage : 12 V
Max Power Dissipation : 100 mW
Min Operating Temperature : -55 °C
Continuous Collector Current : 60 mA
Collector Emitter Voltage (VCEO) : 12 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 3215 In Stock
Applications : Datacom module Grid infrastructure Tablets
hFE Min : 120
Frequency : 5 GHz
Output Power : 100 mW
Number of Pins : 3
Number of Elements : 1
Element Configuration : Single
Max Collector Current : 60 mA
Max Operating Temperature : 125 °C
Emitter Base Voltage (VEBO) : 3 V
Collector Base Voltage (VCBO) : 20 V
Collector Emitter Breakdown Voltage : 12 V
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