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Part Number : MMBTH10-4LT1G
Manufacturer : Sanyo Semiconductor/ON Semiconductor
Description : MMBTH10-4LT1G datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : MMBTH10-4LT1G More Information
ECAD : Request Free CAD Models
Pricing(USD) : $0.25
Remark : Manufacturer: Sanyo Semiconductor/ON Semiconductor. Rozee is one of the Distributors. Wide range of applications.
hFE Min : 120
Frequency : 800 MHz
Case/Package : SOT-23-3
Current Rating : 4 mA
Power Dissipation : 300 mW
Voltage Rating (DC) : 25 V
Element Configuration : Single
Max Power Dissipation : 225 mW
Max Operating Temperature : 150 °C
Emitter Base Voltage (VEBO) : 3 V
Collector Emitter Voltage (VCEO) : 25 V
Collector Emitter Saturation Voltage : 500 mV
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 7581 In Stock
Applications : Mobile phones Datacom module Body electronics & lighting
Polarity : NPN
Packaging : Digi-Reel®
Max Frequency : 800 MHz
Number of Pins : 3
Number of Elements : 1
Transition Frequency : 800 MHz
Max Breakdown Voltage : 25 V
Gain Bandwidth Product : 800 MHz
Min Operating Temperature : -55 °C
Collector Base Voltage (VCBO) : 30 V
Collector Emitter Breakdown Voltage : 25 V
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