Part Number :
BFP520H6327XTSA1
Manufacturer :
IR (Infineon Technologies)
Description :
BFP520H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle :
New from this manufacturer
Delivery :
DHL、UPS、FedEx、Registered Mail
Payment :
T/T Paypal Visa MoneyGram Western Union
More Information :
BFP520H6327XTSA1 More Information
ECAD :
Request Free CAD Models
Pricing(USD) :
$0.50
Remark :
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Gain :
22.5 dB
Width :
1.25 mm
Length :
2 mm
Frequency :
45 GHz
Power Gain :
23.5 dB
Noise Figure :
0.95 dB
Number of Pins :
4
Package Quantity :
3000
Number of Elements :
1
Element Configuration :
Single
Max Collector Current :
40 mA
Max Operating Temperature :
150 °C
Emitter Base Voltage (VEBO) :
1 V
Collector Emitter Voltage (VCEO) :
2.5 V
Products Category :
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty :
2496 In Stock
Applications :
Body electronics & lighting
Portable electronics
Electronic point of sale (EPOS)
Mount :
Surface Mount
Height :
900 µm
Polarity :
NPN
Packaging :
Tape & Reel
Case/Package :
SOT
Max Frequency :
6 GHz
Contact Plating :
Tin
Power Dissipation :
100 mW
Transition Frequency :
45 GHz
Max Breakdown Voltage :
3.5 V
Max Power Dissipation :
100 mW
Min Operating Temperature :
-55 °C
Collector Base Voltage (VCBO) :
10 V
Collector Emitter Breakdown Voltage :
3.5 V
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