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Part Number : BFP780H6327XTSA1
Manufacturer : IR (Infineon Technologies)
Description : BFP780H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Lifecycle : New from this manufacturer
Delivery : DHL、UPS、FedEx、Registered Mail
Payment : T/T Paypal Visa MoneyGram Western Union
More Information : BFP780H6327XTSA1 More Information
ECAD : Request Free CAD Models
Pricing(USD) : $1.78
Remark : Manufacturer: IR (Infineon Technologies). Rozee is one of the Distributors. Wide range of applications.
Gain : 27 dB
Height : 1 mm
Polarity : NPN
Packaging : Tape & Reel
Case/Package : SOT-343-4
Power Dissipation : 600 mW
Transition Frequency : 900 MHz
Max Collector Current : 120 mA
Max Operating Temperature : 105 °C
Collector Base Voltage (VCBO) : 15 V
Ambient Temperature Range High : 105 °C
Collector Emitter Breakdown Voltage : 6.1 V
Products Category : Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty : 4103 In Stock
Applications : Tablets PC & notebooks Test & measurement
Mount : Surface Mount
hFE Min : 85
Frequency : 1.8 GHz
Power Gain : 22 dB
Package Quantity : 3000
Number of Elements : 1
Max Breakdown Voltage : 6.1 V
Max Power Dissipation : 600 mW
Min Operating Temperature : -40 °C
Max Junction Temperature (Tj) : 150 °C
Collector Emitter Voltage (VCEO) : 6.1 V
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